NDLI: Scaling trends and challenges of advanced memory technology

Content Provider	IEEE Xplore Digital Library
Author	Seok-Hee Lee
Copyright Year	2014
Description	Author affiliation: R&D Div., SK hynix, Icheon, South Korea (Seok-Hee Lee) Summary form only given. DRAM and NAND technologies have been successfully developed so far thanks to advanced patterning and device technologies, meeting high density, high performance and low cost requirements. However, imminent scaling limit in DRAM and NAND requires breakthrough technologies to meet market needs. DRAM technology in 1xnm and beyond faces severe challenges, such as difficulties in obtaining sufficient storage capacitance and sensing margin. To alleviate the problems, new materials for cell capacitor should be exploited and systematic aids such as error correction should be considered. Besides these scaling issues, DRAM has been suffering from performance issue, and it requires enhanced peripheral transistor performance with low power and high speed by using new process technologies such as HKMG. A 3D integration with TSV provides a new solution for high density, high speed, low power, and wider bandwidth without traditional device geometric scaling. However, 3D has its own challenges such as high manufacturing cost and reliability that need to be overcome before it could be widely used. 3D NAND flash memory technologies have been studied as a strong contender due to their potential for replacing conventional 2D floating gate cell. Recently, there has been remarkable progresses towards mass production even though their inherent issues of poor data retention and process complexity. Several challenges such as process, material, and cell architecture will be discussed. New non-volatile memories such as ReRAM, PRAM and STT-MRAM have undergone explosive study in the past decade. ReRAM and PRAM are now leading candidates to replace conventional NAND or NOR flash memories and to pioneer the field of Storage Class Memories, while STT-MRAM is regarded as the only a non-volatile memory that can have the performance of DRAM due to its high-speed read/write and excellent cycling endurance. Device characteristics of new non-volatile memories, key technology of device integration and materials will be discussed.
Sponsorship	IEEE Electron Dev. Soc.
Starting Page	1
Ending Page	1
File Size	500296
Page Count	1
File Format	PDF
ISBN	9781479927760
DOI	10.1109/VLSI-DAT.2014.6834928
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-04-28
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Performance evaluation Transistors Through-silicon vias IEEE Potentials Logic gates Microprocessors
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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