NDLI: An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

Content Provider	IEEE Xplore Digital Library
Author	McCue, J.J. Casto, M. Li, J.C. Watson, P. Khalil, W.
Copyright Year	2014
Description	Author affiliation: Air Force Res. Lab., Wright-Patterson AFB, OH, USA (Watson, P.) \|\| HRL Labs., LLC, Malibu, CA, USA (Li, J.C.) \|\| Electroscience Lab., Ohio State Univ., Columbus, OH, USA (McCue, J.J.; Casto, M.; Khalil, W.)
Abstract	In this paper, a double-balanced Gilbert cell down-conversion mixer is demonstrated from 70-110 GHz. The wide bandwidth and high frequency are enabled by the HRL InP/Si BiCMOS process. With an fT of 300 GHz, the available 0.25 μm InP HBTs are used in the signal path while the 90 nm CMOS devices are used for biasing and gain adjustment. The fully differential circuit is implemented using two on-chip Marchand baluns feeding both the LO and RF ports. An IF buffer follows the mixer to improve matching and signal quality for testing. After de-embedding the balun and IF buffer, the mixer core achieves a peak conversion gain of 13 dB, a minimum DSB NF of 10 dB, and an OP1dB of -2 dBm while consuming 5 mA from a 3.3 V supply.
Starting Page	1
Ending Page	4
File Size	1028176
Page Count	4
File Format	PDF
ISBN	9781479936229
DOI	10.1109/CSICS.2014.6978540
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-10-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mixers Indium phosphide Impedance matching Gain BiCMOS integrated circuits CMOS integrated circuits Noise measurement
Content Type	Text
Resource Type	Article

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