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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yueying Liu Reese, E. |
| Copyright Year | 2013 |
| Description | Author affiliation: TriQuint, Richardson, TX, USA (Yueying Liu; Reese, E.) |
| Abstract | A customized nonlinear compact model is applied to AlGaN/GaN HEMT devices for Power Amplifier applications. The model formulation is created to represent behavior specific to GaN HEMT devices. The model incorporates novel formulations for Ids equations, bias dependency of access resistances, charge storage, and dispersion models, tailored to GaN HEMT device behavior. The model has been used to generate nonlinear common-source models in frequency ranges of S-, Ku- and Ka-band processes. A typical 4x50um S-band and Ku-band device will be used to demonstrate the extraction and validation of the model, in which the model has predicted the DCIV, CW S Parameters, and LP results accurately. |
| Starting Page | 1 |
| Ending Page | 5 |
| File Size | 555804 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781479905836 |
| DOI | 10.1109/CSICS.2013.6659214 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-10-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Mathematical model Load modeling Gallium nitride HEMTs Dispersion Equations Predictive models |
| Content Type | Text |
| Resource Type | Article |
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