NDLI: A CMOS compatible process for improved RF performance on highly doped substrates

Content Provider	IEEE Xplore Digital Library
Author	Fernandez, L.J. Arz, U. Schubert, D. Berenschot, E. Wiegerink, R. Flokstra, J.
Copyright Year	2005
Description	Author affiliation: MESA+ Res. Inst., Twente Univ., Enschede, Netherlands (Fernandez, L.J.)
Abstract	In this paper we present a CMOS compatible process for CMOS-grade wafers in order to create specific areas where radio frequency (RF) devices can be implemented without the high losses associated to this substrate. The process is based on refilling of deep trenches, which allows the local replacement of the silicon substrate by silicon nitride, which has very good RF properties (tan /spl delta/ = 5-9 10/sup -4/). The trenches are in the order of 30 /spl mu/m deep and 2 /spl mu/m wide, leaving a space of 2 /spl mu/m in between where the silicon still remains. In this way, half of the lossy substrate is replaced by silicon nitride. We present measurement results which indicate that the RF performance of CMOS-grade wafers can be significantly improved, as well as a careful study of the most relevant fabrication parameters and the consequences for the final RF performance of the substrate. An additional advantage of this new technique is the possibility of using it as a pre-CMOS process, thus allowing monolithic integration of CMOS electronics and RF and microwave components.
Starting Page	167
Ending Page	170
File Size	753650
Page Count	4
File Format	PDF
ISBN	0780390547
DOI	10.1109/SPI.2005.1500935
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-05-10
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS process Radio frequency Silicon Fabrication Coplanar waveguides Monolithic integrated circuits Dielectric substrates Glass Standards development Microwave theory and techniques
Content Type	Text
Resource Type	Article

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