NDLI: The technology of laser formed interactions for wafer scale integration

Content Provider	IEEE Xplore Digital Library
Author	Chapman, G.H. Canter, J.M. Cohen, S.S.
Copyright Year	1989
Description	Author affiliation: MIT Lincoln Lab., Lexington, MA, USA (Chapman, G.H.; Canter, J.M.; Cohen, S.S.)
Abstract	Restructurable VLSI wafer-scale circuits have been built using two methods, both using laser energy to create low resistance connections between bus lines on already existing circuits. In one technique verticle connections of about 10 Omega are made up from top metal, through silicon nitride, to first metal lines. The other involves melting of silicon in the gap between two implant regions, with the lateral diffusion of dopants creating connections of about 100 Omega . Details of the linking structures, their characteristics, and the apparatus used to interconnect them are described.
Starting Page	21
Ending Page	29
File Size	562099
Page Count	9
File Format	PDF
ISBN	0818699019
DOI	10.1109/WAFER.1989.47532
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-06-03
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wafer scale integration Laser beam cutting Integrated circuit interconnections Circuit testing Dielectrics and electrical insulation Laboratories Very large scale integration Silicon Joining processes Metal-insulator structures
Content Type	Text
Resource Type	Article

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