NDLI: Investigation of Scaling for Multi-Gate MOSFETs Using Analytical Solution of 3-D Poisson's Equation

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Investigation of Scaling for Multi-Gate MOSFETs Using Analytical Solution of 3-D Poisson's Equation

Content Provider	IEEE Xplore Digital Library
Author	Yu-Sheng Wu Pin Su
Copyright Year	2007
Description	Author affiliation: Nat. Chiao Tung Univ., Hsinchu (Yu-Sheng Wu; Pin Su)
Abstract	Introduction Due to its better gate control, multi-gate structure is an important candidate for CMOS scaling. Dependent on the aspect ratio, FinFET and Tri-gate are two main options in the multi-gate device design. For 45nm technology, Tri-gate was suggested by [1] as a more scalable structure than FinFET. Nevertheless, the study in [2] indicated that Tri-gate transistors are not feasible when lightly doped body [3] is adopted. Whether Tri-gate is suitable for future scaling merits further examination. In this work, we investigate the scalability of multi-gate MOSFETs using the solution of 3-D Poisson's equation.
Starting Page	1
Ending Page	2
File Size	2259352
Page Count	2
File Format	PDF
ISBN	142440584X
ISSN	1524766X
DOI	10.1109/VTSA.2007.378965
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-23
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Poisson equations High K dielectric materials High-K gate dielectrics Dielectrics and electrical insulation FinFETs Doping Voltage Dielectric devices CMOS technology
Content Type	Text
Resource Type	Article

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