NDLI: Improved 1/f Noise Characteristics in Locally Strained Si CMOS Using Hydrogen-Controlled Stress Liners and Embedded SiGe

Content Provider	IEEE Xplore Digital Library
Author	Ueno, T. Hwa Sung Rhee Ho Lee Myung Sun Kim Cho, H.S. Hion Suck Baik Youn Hwa Jung Hyun Woo Lee Heung Sik Park Cheol Kyu Lee Geum-Jong Bae Nae-In Lee
Copyright Year	2006
Description	Author affiliation: Adv. Technol. Dev. Team, Samsung Electron. Co., Ltd., Yongin (Ueno, T.; Hwa Sung Rhee; Ho Lee; Myung Sun Kim)
Abstract	This paper reports the first experimental demonstration of improved 1/f noise characteristics in a locally strained Si MOS through hydrogen-controlled stress liners and embedded SiGe (eSiGe). For NMOS, the high hydrogen density $(1times10^{22}cm^{-3})$ in the stress liner results in three times more noise than that of PMOS. For PMOS, eSiGe proves to be superior to a compressive stress liner in noise due to the low hydrogen density in the system. The controlled stress does not generate interface states or other scattering centers, which increase noise, and only improves 1/f noise due to carrier mass reduction
Starting Page	104
Ending Page	105
File Size	1101241
Page Count	2
File Format	PDF
ISBN	1424400058
DOI	10.1109/VLSIT.2006.1705238
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-06-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Compressive stress Hydrogen Noise reduction Noise generators MOS devices Weight control Stress control Interface states
Content Type	Text
Resource Type	Article

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