NDLI: A novel CVD polymeric anti-reflective coating (PARC) for DRAM, flash and logic device with 0.1 /spl mu/m CoSi/sub 2/ gate

Content Provider	IEEE Xplore Digital Library
Author	Kung Linliu Mai-Rue Kuo Yi-Ren Huang Shu-Chun Lin Shin-Puu Jeng Chun-Shing Chen
Copyright Year	2000
Description	Author affiliation: Worldwide Semicond. Manuf. Corp., Hsinchu, Taiwan (Kung Linliu)
Abstract	A novel CVD polymeric anti-reflective coating (PARC) process has been developed for KrF lithography. The refractive index, n, and extinction coefficient, k, of PARC are tuned to match the optical properties of substrates. PARC is a conformal layer of thin polymer film, which significantly improves the CD uniformity of critical layers such as Poly Si gate and other features over topography. Since PARC is a pure polymeric material, it is easily removed by the conventional dry ash process. The ease of removal of PARC from Poly Si is particularly beneficial to the formation of salicide for advanced logic devices. In this paper, PARC is used to fabricate devices with 0.1 /spl mu/m CoSi/sub 2/ gate. Furthermore, the etching rate of PARC is about 500% higher than that of organic BARC for DUV photoresist, so that there is less DUV resist loss during ARC open step. PARC is a useful and low-cost process to extend KrF lithography for sub-0.15 /spl mu/m devices.
Starting Page	50
Ending Page	51
File Size	397361
Page Count	2
File Format	PDF
ISBN	0780363051
DOI	10.1109/VLSIT.2000.852764
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Polymer films Coatings Random access memory Lithography Resists Refractive index Extinction coefficients Optical films Optical polymers Optical refraction
Content Type	Text
Resource Type	Article

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