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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tuck-Boon Chan Gupta, P. |
| Copyright Year | 2010 |
| Abstract | Imperfect lithographic patterning leads to nonrectangular polysilicon and diffusion layers. Though electrical modeling of polysilicon rounding has received much attention, same is not true for diffusion. In this work, we propose the first physically derived electrical model for diffusion rounding. We show that channel length, effective device width and Vth of the device are affected. The model shows that effect of rounding is not symmetric with respect to source and drain. Further, we extend the model to handle polysilicon and diffusion patterning imperfections together. The model can be calibrated using circuit simulation instead of silicon/TCAD. The average errors (as verified with TCAD simulation) of the model are 1.6% and 1.7% for TCAD and SPICE based calibration respectively. The average error for the combined poly and diffusion rounding model is 2.7%. As a simple circuit application, we show that poly-to-diffusion spacing rule can be shrunk to reduce cell area by 5% without any delay or leakage penalty. |
| Starting Page | 224 |
| Ending Page | 229 |
| File Size | 400783 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781424455416 |
| ISSN | 10639667 |
| e-ISBN | 9781424455423 |
| DOI | 10.1109/VLSI.Design.2010.23 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-01-03 |
| Publisher Place | India |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFETs Transistors Equations Circuit simulation Silicon SPICE Semiconductor device modeling CMOS technology Lithography Very large scale integration imperfect diffusion patterning non-rectangular mosfet active layer rounding trapezoid mosfet |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering Hardware and Architecture |
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