NDLI: Comparative analysis of SJ-MOSFET and conventional MOSFET by electrical measurements

Content Provider	IEEE Xplore Digital Library
Author	Claudio, A. Cotorogea, M. Macedonio, J.
Copyright Year	2002
Description	Author affiliation: Interior Internado Palmira, Centro Nacional de Investigacion y Desarrollo Tecnologico (CENIDET), Cuernavaca, Mexico (Claudio, A.; Cotorogea, M.; Macedonio, J.)
Abstract	A new type of power MOSFET called super junction MOSFET has been introduced. This new power MOSFET presents an interesting behavior in terms of a R/sub DS(on)/ reduction for the same silicon area allowing fabrication of high voltage devices. Additionally, a reduction in the parasitic capacitances, improving the commutation characteristics, have been observed. Thus, this new power MOSFET could replace the traditional device in different power converter applications like power supplies (SMPS) or power factor correction applications. The objective of this paper is to explore the switching characteristics and to present a comparison of this new device SJ-MOSFET with the conventional power MOSFET under different operating conditions using special test circuits.
Starting Page	96
Ending Page	100
File Size	592294
Page Count	5
File Format	PDF
ISBN	0780376404
DOI	10.1109/CIEP.2002.1216643
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-10-24
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Electric variables measurement Power MOSFET Switched-mode power supply Circuit testing Silicon Fabrication Voltage Parasitic capacitance Power factor correction
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

A new high voltage power MOSFET for power conversion applications

MOSFET switching behaviour under influence of PCB stray inductance

Analysis of discrepancies between measured and predicted conducted emissions in switched-mode power supplies

Common Mode Noise Reduction for Boost Converters Using General Balance Technique

Method for the fast and accurate simulation of switch-mode power supplies

Reduction of EMI by electric field method

Efficiency Improvement Research on Single-stage Power Factor Correction

Capacitance measurement method

Parameter Extraction and SPICE Model Development for 4H-Silicon Carbide (SiC) Power MOSFET

Comparative analysis of SJ-MOSFET and conventional MOSFET by electrical measurements

Similar Documents

A new high voltage power MOSFET for power conversion applications

MOSFET switching behaviour under influence of PCB stray inductance

Analysis of discrepancies between measured and predicted conducted emissions in switched-mode power supplies

Common Mode Noise Reduction for Boost Converters Using General Balance Technique

Method for the fast and accurate simulation of switch-mode power supplies

Reduction of EMI by electric field method

Efficiency Improvement Research on Single-stage Power Factor Correction

Capacitance measurement method

Parameter Extraction and SPICE Model Development for 4H-Silicon Carbide (SiC) Power MOSFET

Comparative analysis of SJ-MOSFET and conventional MOSFET by electrical measurements