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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cham, Kit M. Hui, John Voorde, Paul Vande Fu, H. S. |
| Copyright Year | 1987 |
| Description | Author affiliation: Hewlett Packard Laboratories, 3500 Deer Creek Rd, Palo Alto, CA 94304 (Cham, Kit M.; Hui, John; Voorde, Paul Vande; Fu, H. S.) |
| Abstract | The time dependence of hot carrier degradation of n-channel MOSFETs and the methodology of accelerated stress have been investigated in detail. The time (T) dependence is found to be inconsistent with the simple expression of TN (N-0.25), but rather show a slow-down of the degradation rate. The slope of the degradation curve is also found to be dependent on the stress bias voltage. The projection of device lifetime by accelerated stress based on the TN law and the assumption of constant slope independent of stress bias is unreliable. |
| Starting Page | 191 |
| Ending Page | 194 |
| File Size | 3896586 |
| Page Count | 4 |
| File Format | |
| ISSN | 07350791 |
| DOI | 10.1109/IRPS.1987.362177 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1987-04-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Hot carriers Degradation Acceleration Voltage MOSFETs Very large scale integration Power supplies Laboratories Stress measurement Circuits |
| Content Type | Text |
| Resource Type | Article |
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