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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hallberg, O. |
| Copyright Year | 1981 |
| Description | Author affiliation: ELLEMTEL Utvecklings Aktiebolag, Box 1505, 125 25 ÄLVSJö, Sweden (Hallberg, O.) |
| Abstract | Statistics on voltage-accelerated failures of 4K NMOS RAM's have been compared with accelerated life test data and with real field use data. It is concluded that it is possible to get long-term reliability information from fast overvoltage step stress tests such as 40 ms and 1.2 s dwell time per step. The correlation between step stress data and life-test failures representing the main population is good. It is possible to use this quick test for lot acceptance and to design a proper voltage screening for the particular batch under test. The need for conventional burn-in testing would thus be reduced. |
| Starting Page | 28 |
| Ending Page | 33 |
| File Size | 5567865 |
| Page Count | 6 |
| File Format | |
| ISSN | 07350791 |
| DOI | 10.1109/IRPS.1981.362968 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1981-04-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOS devices Dielectric breakdown Life estimation Life testing Stress Statistical analysis Voltage control Temperature Personal communication networks Qualifications |
| Content Type | Text |
| Resource Type | Article |
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