NDLI: Fusing Mechanism of Nichrome Thin Films

Content Provider	IEEE Xplore Digital Library
Author	Davidson, J. L. Gibson, J. D. Harris, S. A. Rossiter, T. J.
Copyright Year	1976
Description	Author affiliation: Harris Semiconductor, P. O. Box 883, Melbourne, Florida 32901 (Davidson, J. L.; Gibson, J. D.; Harris, S. A.; Rossiter, T. J.)
Abstract	(1) Conduction electrons in nichrome have a short mean-free path. This maximizes E2R heating and precludes electromigration in the direction of electron flow as a fusing mechanism. (2) Transmission electron microscopy is the only effective analytical tool to characterize the programmed fuse gap structure. (3) Nichrome fuses program by molten metal (nickel, chrome) ions moving in the presence of an electric field. The final structure resembles a frozen splash and is described by fluid dynamics. (4) Thermal analysis coupled with empirical programmed fuse data indicate a threshold power density for fusing. If this power density is exceeded, which can be assured if the programming time utilized is as specified, the fuse gap will be wide and reliable. If this power density threshold is only matched, it is possible to create a marginal fuse. (5) Life test results indicate programmed PROM reliability is equivalent to devices of the same complexity that do not utilize fusible links.
Starting Page	173
Ending Page	181
File Size	9568330
Page Count	9
File Format	PDF
ISSN	07350791
DOI	10.1109/IRPS.1976.362738
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1976-04-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Fuses Resistance heating Electromigration Transmission electron microscopy Nickel Fluid dynamics Couplings Life testing PROM
Content Type	Text
Resource Type	Article

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