NDLI: Control of Stacking Faults Produced by Oxidation of Silicon Substrates

Content Provider	IEEE Xplore Digital Library
Author	Pomerantz, D.
Copyright Year	1967
Description	Author affiliation: P. R. Mallory & Co. Inc., Laboratory for Physical Science, Northwest Industrial Park, Burlington, Massachusetts 01803 (Pomerantz, D.)
Abstract	In many applications of silicon epitaxial layers grown on silicon substrates it is necessary to oxidize the substrate and then remove the oxide prior to epitaxial deposition. This oxidation step is found to produce a greatly increased density of stacking faults in the deposit. This anomalous increase in stacking faults can be eliminated if the back (undeposited) substrate surface is treated either to abrasive processes such as lapping and scribing or to a boron gettering process prior to oxidation. Both types of treatment are like-wise found to eliminate saucerlike pits observed in oxidized slices after structural etching. The incidence of these pits is closely correlated with the incidence of stacking faults in the grown layer It is concluded that the pits represent precipitates of fast diffusing impurities and are probable nucleation sites for stacking faults.
Starting Page	120
Ending Page	126
File Size	9700994
Page Count	7
File Format	PDF
ISSN	07350791
DOI	10.1109/IRPS.1967.362403
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1967-11-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stacking Oxidation Silicon Substrates Semiconductor epitaxial layers Surface treatment Abrasives Lapping Boron Gettering
Content Type	Text
Resource Type	Article

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