NDLI: Two-dimensional carrier profiling of a 0.4 /spl mu/m CMOS device by Schottky SCM

Content Provider	IEEE Xplore Digital Library
Author	Nxumalo, J.N. Tran, T. Li, Y. Thomson, D.J.
Copyright Year	1999
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Manitoba Univ., Winnipeg, Man., Canada (Nxumalo, J.N.)
Abstract	By combining metal-semiconductor C-V profiling techniques with two-dimensional scanning probe microscopy, a new technique for 2D delineation of semiconductor doping profiles based on the measurement of the local Schottky contact capacitance has been developed. When a metal probe is brought into contact with a semiconductor, a space-charged depletion region and therefore a capacitor is formed at the junction. By applying a small AC voltage, the voltage derivative of the contact capacitance can be measured with a lock-in amplifier. The amplitude of the derivative signal is a function of the carrier concentration, and the sign gives the type of carrier. The local contact capacitance-voltage (C-V) measurements on standard doping samples show a monotonic behaviour of capacitance derivative (dC/dV) versus doping concentration over a range from 10/sup 14/ cm/sup -3/ to 10/sup 18/ cm/sup -3/. This work concentrates on the 2D doping profiling of a 0.4 /spl mu/m MOSFET. The results demonstrate that this technique is capable of quantitative 2D characterization of semiconductor devices.
Starting Page	310
Ending Page	314
File Size	541222
Page Count	5
File Format	PDF
ISBN	0780352203
DOI	10.1109/RELPHY.1999.761631
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-03-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitance-voltage characteristics Capacitance measurement Semiconductor device doping Voltage Scanning probe microscopy Schottky barriers Capacitors Amplifiers Measurement standards MOSFET circuits
Content Type	Text
Resource Type	Article

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