NDLI: Monte Carlo evidence for need of improved percolation model for non-weibullian degradation in high-κ dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Raghavan, N. Shubhakar, K. Kin Leong Pey
Copyright Year	2013
Description	Author affiliation: Katholieke Univ. Leuven, Leuven, Belgium (Raghavan, N.) \|\| Singapore Univ. of Technol. & Design (SUTD), Singapore, Singapore (Shubhakar, K.; Kin Leong Pey)
Abstract	Dielectric breakdown is one of the critical failure mechanisms and showstopper for ultra-large scale integrated (ULSI) circuits as it impacts the performance and functioning of the transistor, which is the fundamental unit governing the operation of all the advanced microprocessors that we have today. As a reliability engineer, it is essential that the failure mode and mechanism be best described using statistical distributions that correlate with the physical mechanism and driving forces causing failure. In many cases, the distributions used to represent the time to failure data are empirically assumed, without carefully considering its implications on the extrapolated predictions of field lifetime. Application of a wrong distribution can give lifetime estimates that vary by many orders of magnitude, which nullify the very purpose of the reliability study in itself. The Weibull distribution is commonly used to describe random defect generation induced percolation failure of the oxide (dielectric) by means of the “weakest link” phenomenology [1, 2]. While the assumption of a Weibull distribution is well justified for silicon oxide $(SiO_{2})$ and silicon oxynitride (SiON) materials [3, 4], the application of the same stochastics for high permittivity (high-κ) dielectrics is questionable [5] - [7]. This is fundamentally attributable to the different microstructure of the grown / deposited dielectrics, which we will discuss in detail, along with strong physical analysis evidence. We will present further evidence using Kinetic Monte Carlo (KMC) simulations to explain the origin of the non-Weibullian trends observed. The key motivation of this study is to caution microelectronics reliability scientists against the use of standard statistical distributions for all scenarios. We may have to resort to the need for non-standard distributions or selectively use the standard distributions only over confined percentile ranges, as material and device failure mechanisms become increasingly complex and interdependent in nanoscale integrated circuits.
Sponsorship	IEEE Reliability Soc.
Starting Page	1
Ending Page	7
File Size	981045
Page Count	7
File Format	PDF
ISBN	9781467347099
ISSN	0149144X
e-ISBN	9781467347112
DOI	10.1109/RAMS.2013.6517659
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-28
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectrics Market research Reliability Transistors Silicon Microstructure Hafnium compounds Variability Defect Generation Dielectric Breakdown Grain Boundary Percolation
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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