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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Floyd, B.A. |
| Copyright Year | 2004 |
| Description | Author affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA (Floyd, B.A.) |
| Abstract | LNAs and VCOs operating between 50 and 86 GHz have been implemented using a 0.12-/spl mu/m, 200-GHz SiGe bipolar technology. Unbalanced LNAs at 50, 60, and 77 GHz show /spl sim/15 dB of gain, drawing 2, 6, and 8 mA from 1.8 V, respectively. The iCP/sub 1dB/ for the LNAs are from -17 to -20 dBm. The noise figure of the 60-GHz LNA is 4.5 dB. Balanced amplifiers composed of two parallel LNAs with branch-line couplers at the input, and output have also been demonstrated at 60 and 77 GHz, showing 14 and 12-dB gain, respectively. Differential Colpitts VCOs have been implemented at 53, 67, and 85 GHz. Phase noises at a 1-MHz offset are -100, -98, and -94 dBc/Hz, respectively, while tuning ranges are 3.7%, 3.1%, and 2.7%. Each VCO consumes roughly 25 mW, and provides -8 dBm output power to 100 /spl Omega/ differential. |
| Sponsorship | IEE Microwave Theory and Techniques Soc. IEEE Elec. Device Soc. IEEE Solid States Circuits Soc |
| Starting Page | 295 |
| Ending Page | 298 |
| File Size | 250855 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780383338 |
| ISSN | 15292517 |
| DOI | 10.1109/RFIC.2004.1320601 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-06-06 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon germanium Germanium silicon alloys Low-noise amplifiers Voltage-controlled oscillators Gain Noise figure Couplers Phase noise Tuning Power generation |
| Content Type | Text |
| Resource Type | Article |
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