NDLI: A true enhancement mode device technology suitable for dual mode dual band power amplifier applications

Content Provider	IEEE Xplore Digital Library
Author	Glass, E. Huang, J. Martinez, M. Peatman, W. Hartin, O. Valentine, W. LaBelle, M. Costa, J. Johnson, K.
Copyright Year	1999
Description	Author affiliation: Motorola Inc., Tempe, AZ, USA (Glass, E.)
Abstract	We have developed a true enhancement mode AlGaAs/InGaAs heterostructure insulated-gate FET technology that combines single supply operation with state-of-the-art linearity and efficiency performance for both digital and analog portable communications. The measured linearity and efficiency performance of this technology rivals or surpasses the results achieved by PHEMT and HBT devices reported to date. For the NADC modulation format at 1800 MHz and VDS=3.6 V, a power-added efficiency of 50% has been achieved at +30.6 dBm output power, -30 dBc adjacent channel power and -49 dBc alternate channel power.
Starting Page	135
Ending Page	138
File Size	312558
Page Count	4
File Format	PDF
ISBN	0780356047
ISSN	10972633
DOI	10.1109/RFIC.1999.805255
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dual band Power amplifiers Switches Leakage current Linearity Voltage Heterojunction bipolar transistors Power generation Gallium arsenide Insulation
Content Type	Text
Resource Type	Article
Subject	Engineering

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A true enhancement mode device technology suitable for dual mode dual band power amplifier applications