NDLI: High energy electron testing of silicon and GaAs/Ge solar cells

Content Provider	IEEE Xplore Digital Library
Author	Miller, K.B. O'Quinn, C.
Copyright Year	1999
Description	Author affiliation: Ball Aerosp. Syst. Group, Boulder, CO, USA (Miller, K.B.)
Abstract	Silicon and GaAs/Ge solar cells were tested with 20 MeV, 40 MeV, and 60 MeV electrons to determine the displacement damage effects. Silicon cell degradation is linear with Non-Ionizing Energy Loss (NIEL) as reported in the literature. GaAs/Ge degradation was found to scale linearly with NIEL for the maximum power and as the square root of the NIEL for the open circuit voltage (Voc). The short circuit current degradation was found to be independent of electron energy.
Starting Page	108
Ending Page	112
File Size	361749
Page Count	5
File Format	PDF
ISBN	0780356608
DOI	10.1109/REDW.1999.816064
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-07-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Gallium arsenide Photovoltaic cells Degradation Protons Aerospace testing Electron traps Probes Circuits Voltage
Content Type	Text
Resource Type	Article

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