NDLI: Dose rate effects of a bipolar A/D converter

Content Provider	IEEE Xplore Digital Library
Author	Youk, G.U.
Copyright Year	1997
Description	Author affiliation: Florida Univ., Gainesville, FL, USA (Youk, G.U.)
Abstract	Total ionizing dose-rate tests of an AD574 analog-to-digital converter were performed at dose rates of 2 to 10 rad(Si)/sec at an operating temperature (41/spl deg/C). The AD574 has been manufactured by Analog Devices using Bipolar II technology. Results were compared with previous results from others to see trends. The results show increasing failure rate as dose rate increases. Unlike off-line test results at room temperature, no sign of degradation at low dose rates was found from the in-situ tests of AD574 devices at elevated temperature. Fast recovery of failure within 20 minutes post-irradiation annealing was observed. This recovery automatically rules out an interface-trap buildup as a dominant failure mechanism. The contribution of bulk-oxide charges seems to be a major factor.
Starting Page	38
Ending Page	43
File Size	674372
Page Count	6
File Format	PDF
ISBN	0780333985
DOI	10.1109/REDW.1996.574186
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-07-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature CMOS technology Circuit testing Qualifications Radiation effects Manufacturing processes Integrated circuit testing Performance evaluation Degradation Annealing
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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