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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cassan, E. Galdin, S. Dollfus, P. Musseau, O. Hesto, P. |
| Copyright Year | 1997 |
| Description | Author affiliation: Inst. d'Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France (Cassan, E.) |
| Abstract | The relaxation process of high energy electrons, generated in the active layer of an ungraded separate-confinement heterostructure single quantum well laser diode by a radiative perturbation, is studied. Capture and escape are treated as mixed scattering events in a Monte Carlo simulation. The overlap integral between unconfined and confined states, used in the calculation of mixed scattering rates, is given. The beginning of the thermalization is very similar to the one in bulk material, but the weakness of the capture rate is responsible for a carrier bottleneck at the top of the well. The overall relaxation time appears very sensitive to detailed structure parameters, as the well thickness and the optical confinement layer width. |
| Starting Page | 79 |
| Ending Page | 85 |
| File Size | 571452 |
| Page Count | 7 |
| File Format | |
| ISBN | 078034071X |
| DOI | 10.1109/RADECS.1997.698853 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1997-09-15 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Hot carriers Optical scattering Particle scattering Carrier confinement Laser modes Diode lasers High speed optical techniques Lasers and electrooptics Quantum well lasers Electrons |
| Content Type | Text |
| Resource Type | Article |
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