NDLI: High power semiconductors for pulsed switching

Content Provider	IEEE Xplore Digital Library
Author	Vitins, J. Steiner, J.L. Welleman, J.A.
Copyright Year	1989
Description	Author affiliation: Asea Brown Boveri Ltd. (Vitins, J.)
Abstract	The design of large high power thyristors will be described with respect to their application in closing switches e.g. for electromagnetic launchers. The basic limitation today is the plasma spreading of the ignited area within the thyristor chip. As closing switch, the turn-off characteristics are unimportant and a large charge carrier lifetime is advantageous to improve plasma spreading. Available devices with VDRM= 4400 - 6500 V and silicon diameters 80 - 100 mm are analyzed and the circuit requirements for their application are described. These devices can be used for switching load currents of more than 100 kA in less than 100 /spl mu/s. The possible requirement of series and/or parallel connection for higher powers is in many cases offset by the inherent ruggedness of thyristors compared to ignitrons or other gas tubes. Main advantages of thyristors for suchs applications can be summarized with longer lifetime, no degradation, high rep. frequencies and no warming up time. The performance of high power diodes to turn-on at high di/dt > 100 A//spl mu/s in free-wheeling applications is also considered.
Starting Page	352
Ending Page	357
File Size	555224
Page Count	6
File Format	PDF
DOI	10.1109/PPC.1989.767496
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-06-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power semiconductor switches Thyristors Pulsed power supplies Voltage Electromagnetic launching Plasma applications Plasma properties Plasma devices Thyratrons Charge carrier lifetime
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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