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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Daomin Min Shengtao Li Zhangbin Zhou Guilai Yin Jianying Li |
| Copyright Year | 2009 |
| Description | Author affiliation: State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, 710049, China (Daomin Min; Shengtao Li; Zhangbin Zhou; Guilai Yin; Jianying Li) |
| Abstract | Recently, universal power law becomes widely used. In this paper, it was used to study the ZnO/Bi ceramics. Bi is the only additive of ZnO here in order to directly study the effect of Bi in ZnO. ZnO samples with different content of Bi were made by the traditional ceramic technique. Then the microstructure of the acid erosion surface was observed by Polarized Optical Microscope, the dielectric properties of the samples, such as conductivity, permittivity and dielectric loss, were tested by Novocontrol Broadband-Frequency Dielectric Temperature Measuring Instrument, and the activation energy was calculated by Arrhenius relation. A strong Anomalous low-frequency dispersion phenomenon was found while investigating the dielectric properties of ZnO/Bi ceramics. The experimental results of the dielectric properties which are in the frequency range of 0.1Hz∼107Hz and the temperature range of 173K∼473K were systematically analyzed by universal power law. The results show that the conductivity loss is the main factor in the low frequency, while the dielectric loss is dominant in the high frequency. The higher the temperature, the more similarity of the AC I-V characteristic to the DC ones, which means that ω can token the thermally simulated degree of electrons to the temperature, since the conductivity of the samples was generated mostly by thermally simulated electrons. The density ratio of zinc interstitials and oxygen vacancies decreased with the increase of Bi content fewer than 5wt%, and then it will be oxygen vacancies from 5wt % Bi content to 15wt% that dominated the dielectric properties. |
| Starting Page | 345 |
| Ending Page | 348 |
| File Size | 627159 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424443673 |
| DOI | 10.1109/ICPADM.2009.5252414 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-07-19 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Zinc oxide Bismuth Dielectric losses Dielectric loss measurement Ceramics Temperature Frequency Thermal conductivity Optical microscopy Electrons Low-frequency dispersion Universal power law Dielectric property ZnO |
| Content Type | Text |
| Resource Type | Article |
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