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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yaduvir Singh Bimbhra, P.S. |
| Copyright Year | 2003 |
| Description | Author affiliation: Dept. of Electr. Eng., Deemed Univ., Agra, India (Yaduvir Singh; Bimbhra, P.S.) |
| Abstract | This paper, contains for the first time, certain results and data for the switches and devices behavior. The power electronic switches viz. silicon controlled rectifier (SCR), metal oxide semiconductor field effect transistor (MOSFET), gate turn-off thyristor (GTO), MOS controlled thyristor (MCT), insulated gate bipolar transistor (IGBT) and TRIAC have been analyzed for their converter operational losses, thermal sensitivity, switching time characteristics, filter design and snubber requirements, harmonic analysis etc. The results show a comparative analysis among the various switches, for their and switch based devices behavior, leading to their proper selection in the specific applications. Further, the plots give information regarding the device behavior, which necessitates the linear and nonlinear compensation for accurate output and robust behavior of the switch and its device circuit. |
| Starting Page | 1350 |
| Ending Page | 1353 |
| File Size | 220879 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780378857 |
| DOI | 10.1109/PEDS.2003.1283177 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-11-17 |
| Publisher Place | Singapore |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Performance analysis Power electronics Mathematical model Analytical models Thyristors Power semiconductor switches Insulated gate bipolar transistors Harmonic analysis FETs MOSFET circuits |
| Content Type | Text |
| Resource Type | Article |
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