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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Joon-Ung Lee Kyung-Ook Chang Choon-Bae Park Grzybowski, S. |
| Copyright Year | 1991 |
| Description | Author affiliation: Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea (Joon-Ung Lee; Kyung-Ook Chang) |
| Abstract | To contribute more information on the conduction mechanism in ZnO varistors, a study of ZnO varistors with TiO/sub 2/ additives was conducted. The properties of ZnO varistors are found to depend on the grain structure of ZnO. The mechanism of nonlinear conduction of ZnO may be explained on the basis of the grain structure. The TSC (thermally stimulated current) spectrum was measured to study the trapped carriers in ZnO varistors. Four peaks of TSC may be distinguished on the spectrum of TSC. The origin of the first, second, and third TSC peaks was attributed to the detrapping of the trapped electrons in the shallow trap, donor level, and deep trap, respectively. The origin of the fourth peak was attributed to the process of depolarization of the donor ions in the depleted layer. Adding TiO/sub 2/ to ZnO varistors caused the leakage current to increase. |
| Starting Page | 502 |
| Ending Page | 504 |
| File Size | 193627 |
| Page Count | 3 |
| File Format | |
| ISBN | 0879425687 |
| DOI | 10.1109/ICPADM.1991.172107 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-07-08 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Zinc oxide Varistors Additives Electron traps Temperature dependence Ceramics Fabrication Temperature distribution Equations Low voltage |
| Content Type | Text |
| Resource Type | Article |
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