NDLI: 4H-SiC high power SIJFET module

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2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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4H-SiC high power SIJFET module

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4H-SiC high power SIJFET module

Content Provider	IEEE Xplore Digital Library
Author	Sugawara, Y. Takayama, D. Asano, K. Ryu, S. Miyauchi, A. Ogata, S. Hayashi, T.
Copyright Year	2003
Description	Author affiliation: Generall R & D Center, Kansai Electr. Power Co., Amagasaki, Japan (Sugawara, Y.; Takayama, D.; Asano, K.)
Abstract	5kV high power full SiC module technology was developed and 1.6kV 40A SIJFET module was fabricated for the first time, which is the pressure contact flat package type and includes four 6mm /spl times/ 6mm SiC SIJFETs in addition to one 6mm /spl times/ 6mm SiC fly wheeling pn diode. SiC SIJFET operates as the bipolar transistor and its current gain ranges from 20 to 4000. Its turn-on time and turn-off time are 360ns and 109 ns respectively. Since the SIJFET module has not only high current gains but also high switching speeds, it is suitable for the low loss power conversion circuits.
Sponsorship	Univ. Cambridge UK Eng. & Phys. Sci. Res. Council (EPSRC)
Starting Page	127
Ending Page	130
File Size	329414
Page Count	4
File Format	PDF
ISBN	0780378768
DOI	10.1109/ISPSD.2003.1225246
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-04-14
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Electrodes Semiconductor diodes Packaging Voltage Temperature Copper alloys Ceramics Research and development Power semiconductor switches
Content Type	Text
Resource Type	Article

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