NDLI: Analysis on device structures for next generation IGBT

Content Provider	IEEE Xplore Digital Library
Author	Onishi, Y. Momota, S. Kondo, Y. Otsuki, M. Kumagai, N. Sakurai, K.
Copyright Year	1998
Description	Author affiliation: Fuji Electr. Co. Ltd., Nagano, Japan (Onishi, Y.)
Abstract	In recent years, IGBT performances have improved dramatically, and IGBT application fields have expanded widely, especially in high power applications. It is reported that the trench gate IGBT has superior power loss characteristics compared to the conventional planar gate IGBT. However, the trench gate is not the only potential solution for future device structures, because the performance of the planar gate IGBT has not yet reached its limit. There are some factors to be considered when determining device technology for future devices in practical applications, and there are some drawbacks of the trench gate IGBT, including: (1) excessive overcurrent under a short circuit because of the higher transconductance; (2) more complex wafer process technologies and relatively low yields; (3) poor gate oxide quality. In this paper, the possible device geometry design aspects for future high performance 600 V IGBTs are discussed.
Starting Page	85
Ending Page	88
File Size	343271
Page Count	4
File Format	PDF
ISBN	0780347528
ISSN	10636854
DOI	10.1109/ISPSD.1998.702640
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-03
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Metalworking machines Voltage Circuits Geometry Current density Production facilities Transconductance Inverters Fabrication
Content Type	Text
Resource Type	Article

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