NDLI: 1200 V MCCT: a new concept three terminal MOS-gated thyristor

Content Provider	IEEE Xplore Digital Library
Author	Iwamuro, N. Iwaana, T. Harada, Y. Seki, Y.
Copyright Year	1997
Description	Author affiliation: Adv. Device Technol. Lab., Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan (Iwamuro, N.)
Abstract	High power semiconductor devices are required for various applications like a motor control in traction system. Desired device characteristics for such applications are low forward voltage drop, high current capability and large blocking voltage capability. Insulated Gate Bipolar Transistor (IGBT) is now widely accepted for many applications due to its simple gate control and current saturation feature, and many studies have been done for its high voltage application. It has been found that this device structure has a high forward voltage drop at a large current density when designed for the high voltage application. As an alternative, MOS-gated thyristor structures such as MOS Controlled Thyristor (MCT) and Base Resistance controlled Thyristor(BRT) have been studied for the high voltage application because of its simple gate drive capability and low forward voltage drop. However, since this device does not have the current saturation feature, passive protection must be provided for its stable operation. In this paper, a new class of MOS-gated thyristor structure named MOS Controlled Cascode Thyristor (MCCT) which exhibits a superior short circuit withstand capability as well as the low forward voltage drop will be demonstrated for the first time. Furthermore, this device shows a fast switching speed which is comparable to that of an IGBT and an excellent maximum turn-off capability, simultaneously.
Starting Page	245
Ending Page	246
File Size	227376
Page Count	2
File Format	PDF
ISBN	0780339932
ISSN	10636854
DOI	10.1109/ISPSD.1997.601484
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-26
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thyristors Voltage control Low voltage Insulated gate bipolar transistors Power semiconductor devices Motor drives Current density MOSFETs Protection Circuits
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The MOS-gated emitter switched thyristor

The dual gate EST: a new MOS-gated thyristor structure

A study of EST's short-circuit SOA

Analysis of 4500 V double trench MOS controlled thyristor

Double gate MOS device having IGBT and MCT performances

A new single gate MOS controlled thyristor with current saturation and large SOA

An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices

New MOS-gate controlled thyristor (MGCT)

2nd generation dual gate MOS thyristor

1200 V MCCT: a new concept three terminal MOS-gated thyristor

Similar Documents

The MOS-gated emitter switched thyristor

The dual gate EST: a new MOS-gated thyristor structure

A study of EST's short-circuit SOA

Analysis of 4500 V double trench MOS controlled thyristor

Double gate MOS device having IGBT and MCT performances

A new single gate MOS controlled thyristor with current saturation and large SOA

An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices

New MOS-gate controlled thyristor (MGCT)

2nd generation dual gate MOS thyristor

1200 V MCCT: a new concept three terminal MOS-gated thyristor