NDLI: Monolithic integration of the vertical IGBT and intelligent protection circuits

Content Provider	IEEE Xplore Digital Library
Author	Shen, Z.J. Robb, S.P.
Copyright Year	1996
Description	Author affiliation: Power Products Div., Motorola Inc., Phoenix, AZ, USA (Shen, Z.J.; Robb, S.P.)
Abstract	In this paper, we have developed a new smart discrete technology to monolithically integrate the high voltage vertical IGBT with low-voltage NMOS protection circuitry by adding a p-well step to the conventional IGBT process. Two new 600 V intelligent IGBTs, based on the same technology but using different protection schemes, are reported for the first time. The first intelligent IGBT provides protection against over-current and over-temperature conditions. The second intelligent IGBT provides protection against short circuit conditions by means of sensing collector voltage. The typically observed characteristics of the intelligent IGBT's include a forward voltage of 1.4 V at a current density of 100 A/cm/sup 2/, a turn-off fall time of 200 ns, and a short-circuit withstand time at 125/spl deg/C of more than 50 /spl mu/s.
Starting Page	295
Ending Page	298
File Size	416938
Page Count	4
File Format	PDF
ISBN	0780331060
ISSN	10636854
DOI	10.1109/ISPSD.1996.509501
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-05-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Monolithic integrated circuits Insulated gate bipolar transistors MOSFETs Resistors Protection Diodes Temperature sensors Threshold voltage Fault detection Silicon
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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