NDLI: A new and novel ultra high speed 1 kV MOSFET SPICE model

Content Provider	IEEE Xplore Digital Library
Author	Gill, H. Meade, J. Sarjeant, W.J. Krausse, G.
Copyright Year	2000
Description	Author affiliation: Inst. of Energy Syst., Buffalo Univ., Buffalo, NY, USA (Gill, H.; Meade, J.; Sarjeant, W.J.)
Abstract	Improvements in packaging and fabrication for the DE-SERIES Fast Power/sup TM/ MOSFETs has sparked interest in creating an accurate model of these devices. The goal of these new devices is to design new ultra fast pulse generators. As pulsed power components increase in speed, equipment to take advantage of that speed need to keep up. However, the built-in MOSFET models found in SPICE are more attuned to the modeling of low voltage MOSFETs such as those encountered in integrated circuits, rather than for power MOSFETs. In the absence of a suitable built-in model, the power MOSFET is simulated by combining further elements with the built-in model resulting in a more faithful representation of the power MOSFET. This paper describes the model's specific characteristics as well as its adaptability to different devices. For example the turn on and turn off time are both independently adjustable, as well as the saturation voltage and feedback capacitance. This and many other options allow the model to be compared to empirical test results of various MOSFET devices and easily match their characteristics to the model.
Starting Page	141
Ending Page	144
File Size	417120
Page Count	4
File Format	PDF
ISBN	0780358260
ISSN	10768467
DOI	10.1109/MODSYM.2000.896185
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits SPICE Power MOSFET Integrated circuit modeling Packaging machines Fabrication Pulse generation Low voltage Circuit simulation Feedback
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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