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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wen-Chung Chang Shen-Li Chen Ho, C.S. Chen, Y.G. |
| Copyright Year | 1996 |
| Description | Author affiliation: TD Dept., Mosel Vitelic Inc., Hsinchu, Taiwan (Wen-Chung Chang) |
| Abstract | In our study, we characterize the temperature and stress dependences of the substrate current, and present a complete substrate-current model which is suitable for both room temperature and liquid-nitrogen temperature operations. The impact ionization phenomenon as well as the temperature and voltage dependence of saturation voltage are also investigated. The theoretical results of our complete substrate-current model from 77 K to 300 K are found in good agreement with the measurement data. This model is suitable for MOSFETs simulation. |
| Starting Page | 350 |
| Ending Page | 355 |
| File Size | 424348 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780332687 |
| ISSN | 10878785 |
| DOI | 10.1109/SOUTHC.1996.535092 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-06-25 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFETs Temperature dependence Voltage Stress Impact ionization |
| Content Type | Text |
| Resource Type | Article |
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