NDLI: The mechanism of anisotropic, electrochemical silicon etching in alkaline solutions

Content Provider	IEEE Xplore Digital Library
Author	Seidel, H.
Copyright Year	1990
Description	Author affiliation: Messerschmitt-Bolkow-Blohm GmbH, Muenchen, West Germany (Seidel, H.)
Abstract	Some experimental data on the anisotropy, selectivity, and voltage dependence of anisotropic silicon etchants are given. An attempt is undertaken to provide a general unifying model describing the reaction mechanism and the key features of all alkaline anisotropic etchants of silicon. It is shown that the reaction is electrochemical, comprising the transfer of four electrons between the electrolyte and the solid for the dissolution of one silicon atom. The crystallographic anisotropy can be attributed to small differences of the binding energy of surface atoms depending on their respective surface orientations. High boron concentrations induce the shrinking of a space charge layer on the silicon surface, which in turn leads to the fast recombination of electrons injected into the conduction band making them no longer available for the reduction of water. The electrochemical etch stop at positive potentials is due to the anodic oxidation of silicon. The finite etch rate observed at etch stop potentials was found to correspond well to the etch rate of SiO/sub 2/.
Starting Page	86
Ending Page	91
File Size	485969
Page Count	6
File Format	PDF
DOI	10.1109/SOLSEN.1990.109827
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-06-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Anisotropic magnetoresistance Silicon Etching Electrons Atomic layer deposition Voltage Solids Crystallography Boron Space charge
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The mechanism of anisotropic etching of silicon in a complexant alkaline system

New phenomena observed in electrochemical micromachining of silicon

Investigation of silicon anisotropic etching in alkaline solutions with propanol addition

Anisotropic etching properties of silicon in KOH and TMAH solutions

Electron emission from polycrystalline silicon field emitter arrays coated with a thin diamond-like carbon layer

Anisotropic etching of silicon in alkaline solutions : Microscopic activation energy calculations for silicon atoms and its simulation applications

Boron Etch-stop In TMAH Solutions

Resistless fabrication of embedded nanochannels by FIB patterning, wet etching and atomic layer deposition

Simulation of anisotropic wet-chemical etching using a physical model

The mechanism of anisotropic, electrochemical silicon etching in alkaline solutions

Similar Documents

The mechanism of anisotropic etching of silicon in a complexant alkaline system

New phenomena observed in electrochemical micromachining of silicon

Investigation of silicon anisotropic etching in alkaline solutions with propanol addition

Anisotropic etching properties of silicon in KOH and TMAH solutions

Electron emission from polycrystalline silicon field emitter arrays coated with a thin diamond-like carbon layer

Anisotropic etching of silicon in alkaline solutions : Microscopic activation energy calculations for silicon atoms and its simulation applications

Boron Etch-stop In TMAH Solutions

Resistless fabrication of embedded nanochannels by FIB patterning, wet etching and atomic layer deposition

Simulation of anisotropic wet-chemical etching using a physical model

The mechanism of anisotropic, electrochemical silicon etching in alkaline solutions