NDLI: TiW as a direct contact material and a diffusion barrier to n+ and p+ implanted areas

Content Provider	IEEE Xplore Digital Library
Author	Lindberg, A. Ostling, M. Norstrom, H. Wennstrom, U.
Copyright Year	1987
Description	Author affiliation: Institute of Microwave Technology, Box 70033, S-100 44 Stockholm, Sweden (Lindberg, A.; Ostling, M.) \|\| RIFA AB, S-163 81 Stockholm, Sweden (Norstrom, H.; Wennstrom, U.)
Abstract	Sputtered TiW(15/85 wt.%) has been investigated as a diffusion barrier layer between Al and Si and as a direct contact material to $n^{+}-and$ $p^{+}-doped$ silicon areas. Rutherford backscattering spectroscopy (RBS) in combination with reverse leakage current measurements on gated diodes were used to investigate the barrier properties of the deposited TiW films. TiW was observed to prevent intermixing between Al and Si up to 450 °C. Four terminal Kelvin resistor structures, implanted with different doses of As and BF, ranging from 1E15 $cm^{¿2}$ up to 1E16 $cm^{¿2},$ were used to determine the respective contact resistivity. The actual surface doping concentration was determined by spreading resistance profiling (SRP). Contact resistance values well within the acceptable limit for VLSI processing were achieved.
Starting Page	191
Ending Page	195
File Size	1550404
Page Count	5
File Format	PDF
ISBN	0444704779
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-09-14
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Elsevier
Subject Keyword	Surface resistance Silicon Backscatter Spectroscopy Leakage current Current measurement Diodes Kelvin Resistors Conductivity
Content Type	Text
Resource Type	Article

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