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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pomp, H.G. Lifka, H. Paulzen, G. Montree, A.H. Woerlee, P.H. Woltjer, R. |
| Copyright Year | 1993 |
| Description | Author affiliation: Philips Res. Labs., Eindhoven, Netherlands (Pomp, H.G.; Lifka, H.; Paulzen, G.; Montree, A.H.; Woerlee, P.H.; Woltjer, R.) |
| Abstract | For a 0.25 μm CMOS process a simple and compatible two-step $N_{2}O$ nitridation technology was developed. High quality dielectrics were obtained for both surface channel PMOS and NMOS devices. The use of the nitridation technology improves the gate oxide quality considerably. Furthermore the technology enables the use of $BF_{2}^{+}$ for gate and drain doping of the PMOS devices. The hot carrier degradation measured at worst case condition $(V_{ga}$ = $l/2V_{ds}),$ results in a slight improvement of lifetime of PMOS devices. |
| Starting Page | 399 |
| Ending Page | 402 |
| File Size | 323964 |
| Page Count | 4 |
| File Format | |
| ISBN | 2863321358 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1993-09-13 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Editions Frontieres |
| Subject Keyword | MOS devices CMOS technology Dielectric devices Boron Oxidation Annealing Threshold voltage Transconductance CMOS process Furnaces |
| Content Type | Text |
| Resource Type | Article |
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