NDLI: A comparative approach of low frequency noise in 0.25 and 0.12 /spl mu/m Partially and Fully Depleted SOI N-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Dieudonne, F. Haendler, S. Jomaah, J. Balestra, F.
Copyright Year	2002
Description	Author affiliation: Inst. of Microelectron., Electromagnetism, Photonics, ENSERG, Grenoble, France (Dieudonne, F.; Haendler, S.; Jomaah, J.; Balestra, F.) Low frequency noise (LFN) in N-channel Partially Depleted (PD) and Fully Depleted (FD) SOI devices fabricated on Unibond substrates is investigated for 0.25 and 0.12 /spl mu/m SOI CMOS technology nodes. LFN is analyzed in both linear and saturation regimes. We draw some comparisons between noise levels and kink-related excess noise for both technologies.
Sponsorship	IEEE Electron Devices Soc
Starting Page	105
Ending Page	106
File Size	130704
Page Count	2
File Format	PDF
ISBN	0780374398
DOI	10.1109/SOI.2002.1044437
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-10-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon on insulator technology MOSFETs Semiconductor device noise CMOS integrated circuits
Content Type	Text
Resource Type	Article

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A comparative approach of low frequency noise in 0.25 and 0.12 /spl mu/m Partially and Fully Depleted SOI N-MOSFETs