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A high-voltage lateral IGBT with significantly improved on-state characteristics on SOI for an advanced PDP scan driver IC
| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sumida, H. Hirabayashi, A. Kobayashi, H. |
| Copyright Year | 2002 |
| Description | Author affiliation: Fuji Electr. Co. Ltd., Nagano, Japan (Sumida, H.; Hirabayashi, A.; Kobayashi, H.) The authors have attempted to develop a second generation LIGBT with significantly improved on-state characteristics compared against an existing LIGBT. The paper shows the characteristics of the developed 2nd generation LIGBT and introduces a new PDP scan driver IC fabricated by using the 2nd generation LIGBT. |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 64 |
| Ending Page | 65 |
| File Size | 129931 |
| Page Count | 2 |
| File Format | |
| ISBN | 0780374398 |
| DOI | 10.1109/SOI.2002.1044418 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-10-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Silicon on insulator technology Insulated gate bipolar transistors Flat panel displays Driver circuits Bipolar integrated circuits Power integrated circuits Power bipolar transistors |
| Content Type | Text |
| Resource Type | Article |