NDLI: Physical Modeling and Scaling Properties of 4H-SiC Power Devices

Content Provider	IEEE Xplore Digital Library
Author	Hatakeyama, T. Nishio, J. Ota, C. Shinohe, T.
Copyright Year	2005
Description	Author affiliation: Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan. E-mail tetsuo2. Hatakeyama@toshiba.co.jp (Hatakeyama, T.)
Abstract	4H silicon carbide (4H-SiC) has great potential for use as a material for power devices owing to its superior electrical properties. The distinctive feature of 4H-SiC is the high avalanche breakdown field and its anisotropy. In order to realize 4H-SiC power devices that make the best use of the excellent physical properties, device simulation, considering anisotropic physical properties is indispensable. This paper reports on the modeling of anisotropic impact ionization coefficients for device simulation, and the effect of anisotropic impact ionization coefficients on the avalanche breakdown of 4H-SiC power devices. We show that the avalanche breakdown voltage is degraded due to the anisotropy of impact ionization coefficients, which is caused by the lateral field at the termination structure. In addition, we precisely evaluate the effect of the high avalanche breakdown field of 4H-SiC on the performance of power devices. Scaling theory is applied for the design of power devices. A new figure of merit (HFOM) is derived as an invariant of scale transformation, which is a function of avalanche breakdown field and regarded as a measure of the performance of the power device.
Starting Page	171
Ending Page	174
File Size	1985611
Page Count	4
File Format	PDF
ISBN	4990276205
DOI	10.1109/SISPAD.2005.201500
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-01
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Society of Applied Physics
Subject Keyword	Anisotropic magnetoresistance Impact ionization Silicon carbide Avalanche breakdown Diodes Breakdown voltage Doping Neodymium Semiconductor materials Semiconductor process modeling
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Simulation of anisotropic breakdown in 4H-SiC diodes

Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

Avalanche breakdown of 4H-SiC diodes with edge terminated by a 2/spl deg/ positive bevel

The Simulation Breakdown Characteristic of 4H-SiC SBD with Field Rings

Pattern of Near-Uniform Avalanche Breakdown in Off-Oriented 4H SiC

Termination Optimization for 4H-Sic p-i-n Diodes

Temperature dependence of breakdown in anisotropic 6H-SiC MOSFET

Effect of punch through factor on the breakdown characteristics of 4H-SiC IMPATT diode

High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices

Physical Modeling and Scaling Properties of 4H-SiC Power Devices

Similar Documents

Simulation of anisotropic breakdown in 4H-SiC diodes

Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

Avalanche breakdown of 4H-SiC diodes with edge terminated by a 2/spl deg/ positive bevel

The Simulation Breakdown Characteristic of 4H-SiC SBD with Field Rings

Pattern of Near-Uniform Avalanche Breakdown in Off-Oriented 4H SiC

Termination Optimization for 4H-Sic p-i-n Diodes

Temperature dependence of breakdown in anisotropic 6H-SiC MOSFET

Effect of punch through factor on the breakdown characteristics of 4H-SiC IMPATT diode

High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices

Physical Modeling and Scaling Properties of 4H-SiC Power Devices