NDLI: Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation

Content Provider	IEEE Xplore Digital Library
Author	Jungemann, C. Neinhus, B. Meinerzhagen, B.
Copyright Year	2000
Description	Author affiliation: Inst. fur Theor. Elektrotech. und Mikroelektron., Bremen Univ., Germany (Jungemann, C.)
Abstract	Transit times and cut-off frequency of a silicon/germanium heterojunction bipolar transistor (SiGe HBT) are investigated by consistent drift-diffusion (DD), hydrodynamic (HD), and full-band Monte Carlo (FB-MC) simulations. Good agreement of all three transport models is found for the collector transit time. The quasiballistic transport in the base is well described by the HD model and yields the same transit time as the FB-MC model, whereas the DD model yields a much larger transit time, because it does not include any velocity overshoot effects. Surprisingly, in the emitter region, the FB-MC model yields the largest transit time, leading to a peak cut-off frequency for the special device structure under investigation which is even smaller than the DD peak value. The strong anisotropy of the strained band structure in the base, which is not captured in full detail by the DD and HD models, is identified as a possible reason for this unexpected behavior.
Starting Page	42
Ending Page	45
File Size	309940
Page Count	4
File Format	PDF
ISBN	0780362799
DOI	10.1109/SISPAD.2000.871202
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-06
Publisher Place	Washington
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrons High definition video Heterojunction bipolar transistors Cutoff frequency Silicon germanium Germanium silicon alloys Anisotropic magnetoresistance Voltage Hydrodynamics Monte Carlo methods
Content Type	Text
Resource Type	Article

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