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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Barillaro, G. Lazzerini, G.M. Strambini, L.M. |
| Copyright Year | 2008 |
| Description | Author affiliation: Dipt. di Ing. dell'Inf., Univ. di Pisa, Pisa (Barillaro, G.; Lazzerini, G.M.; Strambini, L.M.) |
| Abstract | In this work, electrical measurements and modeling of an integrated porous silicon (PS) JFET (PSJFET) gas sensor are reported. The experimental $I_{DS}-V_{DS}$ curves were measured for different $V_{GS}$ voltages, both in synthetic air and in presence of 300 ppb of $NO_{2}.$ The modeling was carried out by taking both the PS layer and the FET structure into account. By best fitting the experimental data with the given model, a quantitative evaluation of the effect of $NO_{2}$ on both the PS layer and the FET structure was performed. Firstly, an indirect estimation of the PS resistance values in air $(R_{PS_AIR}~31$ kOmega) and in $NO_{2}$ $(R_{PS_NO2}~3.2$ kOmega) was achieved, in agreement with data reported in literature and acquired by direct electrical measurements on PS. Moreover, it was also estimated that exposure to 300 ppb of $NO_{2}$ resulted in a reduction of the FET channel section of ~0.2 mum, with respect to air. |
| Starting Page | 494 |
| Ending Page | 497 |
| File Size | 337212 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424425808 |
| ISSN | 19300395 |
| DOI | 10.1109/ICSENS.2008.4716485 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-10-26 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Gas detectors Chemical sensors FETs Sensor phenomena and characterization Fabrication Electronic circuits Semiconductor device modeling Electric variables measurement Voltage |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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