NDLI: Piezoelectric microresonators based on aluminum Nitride for mass sensing applications

Content Provider	IEEE Xplore Digital Library
Author	Gonzalez-Castilla, S. Olivares, J. Iborra, E. Clement, M. Sangrador, J. Malo, J. Izpura, I.
Copyright Year	2008
Description	Author affiliation: Grupo de Microsist. y Mater. Electronicos, Univ. Politec. de Madrid, Madrid (Gonzalez-Castilla, S.; Olivares, J.; Iborra, E.; Clement, M.; Sangrador, J.; Malo, J.; Izpura, I.)
Abstract	In this work we analyze the vibrational behavior of microresonators (cantilevers and bridges) actuated with piezoelectric aluminum nitride (AlN) films, to investigate the suitability of these devices as mass sensors. The resonators of different geometries consisted of a freestanding unimorph structure made up of a metal/AlN/metal piezoelectric stack supported by a $Si_{3}N_{4}$ structural layer. The out-of-plane motion of the resonators was assessed by laser interferometry. The electrical impedance of the devices exhibited significant variations at some resonant frequencies ranging from 0.5 MHz to 13 MHz. The mass sensitivity of the microresonators was evaluated through the frequency shift of the resonant modes when loading the resonators with $SiO_{2}$ films. High order resonant modes provided higher mass sensitivities, with values as low as 6 ag/Hz, which improved significantly our previous results.
Starting Page	486
Ending Page	489
File Size	1057440
Page Count	4
File Format	PDF
ISBN	9781424425808
ISSN	19300395
DOI	10.1109/ICSENS.2008.4716483
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-26
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microcavities Aluminum nitride Resonance Bridges Piezoelectric devices Piezoelectric films Geometrical optics Laser modes Interferometry Impedance
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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