NDLI: 830nm graded index double barrier separate confinement heterostructure laser diodes with small vertical divergence and temperature insensitive characteristics

Content Provider	IEEE Xplore Digital Library
Author	Chih-Tsang Hung Tsong-Lin Ho Tien-Chang Lu
Copyright Year	2012
Description	Author affiliation: Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan (Chih-Tsang Hung; Tsong-Lin Ho; Tien-Chang Lu)
Abstract	Semiconductor laser diodes (LDs) are preferred as pump sources for many solid state laser systems. However, these applications require mainly high output power and narrow beam divergence of LDs to achieve high conversion and coupling efficiencies. Widening the transverse mode to reduce power density at the facet is one direct approaching to increase the catastrophic optical damage (COD). A reduced optical confinement factor can be naturally obtained in lasers with wide waveguides, providing narrow far field emission [1]. Various optimizing methods of laser heterostructures focus on the beam divergence reduction and then contribute to high COD level. Unfortunately, a decrease of the confinement factor is inevitably connected with a deterioration of the laser performance, such as threshold current, slop efficiency, and maximum output power. Several designs have been proposed to mitigate these side effects, such as utilization of a large optical cavity (LOC) into separate-confinement heterostructure (SCH) layers [2], inserting additional layers to control waveguide properties of conventional SCHs [3], or using the vertically integrated passive array [4]. A main disadvantage of LOC design is, however, the deterioration of the laser diode performance as waveguide layers are modified excessively thick to reach very high power operation. Compared with the LOC structure into SCH LDs, the LDs with the double barrier separate-confinement heterostructure (DBSCH) structure possess superior characteristics in both COD levels and beam divergence with only moderate deterioration of LD performance in slope efficiency and characteristic temperature [5]. For DBSCH LDs, pair of wide-gap barrier layers which possess low refractive index are inserted into the interfaces between the waveguide and cladding layers, which will widen the transverse mode by modifying the epitaxial layers of double barriers (DBs).
Starting Page	76
Ending Page	77
File Size	481620
Page Count	2
File Format	PDF
ISBN	9781457708282
ISSN	08999406
e-ISBN	9781457708299
DOI	10.1109/ISLC.2012.6348342
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical waveguides Laser beams Optical device fabrication Temperature Optical refraction Optical variables control Threshold current
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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