NDLI: Uniform and High-Power Characteristics of AlGaInP-based Laser Diodes by 4-inch Wafer Process Technology for DVD-R/RW/RAM

Content Provider	IEEE Xplore Digital Library
Author	Sumitomo, H. Kajiyama, S. Oguri, H. Sakashita, T. Domoto, S. Nakao, K. Yamamoto, T. Kita, T. Komatani, T. Kawakubo, H. Ono, M. Izumi, S.
Copyright Year	2006
Description	Author affiliation: Eudyna Devices Inc., Yamanashi (Sumitomo, H.; Kajiyama, S.; Oguri, H.; Sakashita, T.; Domoto, S.; Nakao, K.; Yamamoto, T.; Kita, T.; Komatani, T.; Kawakubo, H.; Ono, M.; Izumi, S.)
Abstract	In this study, we demonstrate the high-power (over 400 mW) at 75 degC single-lateral-mode operation of a 650-nm band LD, and we present the excellent uniformity of LD characteristics in 4-inch wafer. In summary, we have successfully fabricated high-power and single-lateral-mode 650-nm band AlGaInP LDs by using the 4-inch wafer process technology for the first time. The results confer the promising way to realize the high-speed (over 8times) dual layer recordable DVD systems
Sponsorship	: IEEE LEO
Starting Page	53
Ending Page	54
File Size	236954
Page Count	2
File Format	PDF
ISBN	0780395603
DOI	10.1109/ISLC.2006.1708082
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Diode lasers DVD Costs Optical recording Power generation Thermal resistance Temperature dependence Threshold current Electrons Optical devices
Content Type	Text
Resource Type	Article

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Uniform and High-Power Characteristics of AlGaInP-based Laser Diodes by 4-inch Wafer Process Technology for DVD-R/RW/RAM