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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bouchoule, S. Kazmierski, C. Mathoorasing, D. Ougazzaden, A. Marzin, J.-Y. |
| Copyright Year | 1996 |
| Description | Author affiliation: CNET, Bagneux, France (Bouchoule, S.) |
| Abstract | We report an extensive experimental study of barrier strain influence on high speed properties of compressively strained quaternary (InGaAsP) multi-quantum well DFB lasers emitting at 1.55 /spl mu/m. It is experimentally shown that a strong decrease of nonlinear gain coefficient can be obtained by reducing the barrier strain, leading to quantum well laser structures with damping coefficient as low as 0.18 ns, i.e. intrinsic bandwidth as high as 50 GHz. This result is explained by a substantial reduction of carrier capture time to escape time ratio, due to an increase of the well/barrier offset between the conduction and valence bands. |
| Starting Page | 155 |
| Ending Page | 156 |
| File Size | 208804 |
| Page Count | 2 |
| File Format | |
| ISBN | 078033163X |
| DOI | 10.1109/ISLC.1996.558775 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-10-13 |
| Publisher Place | Israel |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Capacitive sensors Quantum well lasers Damping Quantum well devices Laser modes Tensile strain Performance gain Charge carrier density Charge carrier processes Strain control |
| Content Type | Text |
| Resource Type | Article |
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