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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Daning Zhou Zhichao Liu Pengju Kong Kai Sun Lipei Huang Sasagawa, K. |
| Copyright Year | 2004 |
| Description | Author affiliation: Dept. of Electr. Eng., Tsinghua Univ., Beijing, China (Daning Zhou; Zhichao Liu; Pengju Kong; Kai Sun; Lipei Huang) |
| Abstract | An improved driving and protection circuit for reverse blocking IGBT (RB-IGBT) is proposed in this paper. This scheme can reduce the RB-IGBT switching transition substantially without causing the increase of di/dt in turn-on transition and dv/dt in turn-off transition. The drive part of the proposed circuit is composed of a conventional push-pull output stage and two dynamic current sources - a current generator and a current sink. The push-pull stage works with conventional method while the current generator and current sink work primarily during switching transitions. A novel detecting and control circuit is implemented to control the two current sources. In this paper, a novel over-current and short-circuit protection method suitable for RB-IGBT is also implemented. |
| Sponsorship | IEEE Power Electon. Soc |
| Starting Page | 118 |
| Ending Page | 124 |
| File Size | 513841 |
| Page Count | 7 |
| File Format | |
| ISBN | 0780383990 |
| ISSN | 02759306 |
| DOI | 10.1109/PESC.2004.1355725 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-06-20 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Protection Circuits Insulated gate bipolar transistors Switches Bidirectional control Semiconductor diodes Voltage control Electromagnetic transients Electromagnetic interference Sun |
| Content Type | Text |
| Resource Type | Article |
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