NDLI: Membrane Supported AlN FBAR Structures Obtained by Micromachining of High Resistivity Silicon

Content Provider	IEEE Xplore Digital Library
Author	Neculoiu, D. Vasilache, D. Konstantinidis, G. Morosanu, C. Stavrinidis, A. Kostopoulos, A. Cismaru, A. Buiculescu, C. Petrini, I. Miiller, A.
Copyright Year	2007
Description	Author affiliation: lMT-Bucharest, Bucharest (Neculoiu, D.; Vasilache, D.)
Abstract	This paper presents the manufacturing and the characterization of AIN membrane supported F-BAR structures. The 2 mum thin AIN layer was grown using sputtering techniques, on a high resistivity (111) oriented silicon substrate. Conventional contact lithography, e-gun Ti/Au evaporation and lift-off techniques were used to define top-side metallization of the the FBAR structures. Bulk micromachinig techniques were used for the release of the AIN membrane. The bottom side metallization of the micromachined structure was obtained by means of sputtered gold. S-parameter measurements have shown a resonance around 1.6 GHz. The extracted value of acoustic velocity is in good agreement with that reported by other authors on materials fabricated by other methods.
Starting Page	293
Ending Page	296
File Size	1843965
Page Count	4
File Format	PDF
ISBN	9781424408474
ISSN	1545827X
DOI	10.1109/SMICND.2007.4519705
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-10-15
Publisher Place	Romania
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Biomembranes Film bulk acoustic resonators Micromachining Conductivity Silicon Gold Metallization Pulp manufacturing Sputtering Lithography AlN membranes FBAR structures
Content Type	Text
Resource Type	Article

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