NDLI: New application of surface-barrier GaP photodiodes

Content Provider	IEEE Xplore Digital Library
Author	Malik, A. Vygranenko, Yu. Shabashkevich, B. Piroszenko, S.
Copyright Year	2001
Description	Author affiliation: Electron. Dept, INAOE, Puebla, Mexico (Malik, A.)
Abstract	This work investigates a quantum efficiency control in surface-barrier photodiodes fabricated by deposition of ITO or FTO thin films onto epitaxial n-n/sup +/-GaP. It is shown that ITO (or FTO)/GaP photodiodes are extremely attractive for UV instrumentation due to high detectivity D* up to 10/sup 15/ cm/spl middot/Hz/sup 1/2//W and production simplicity. The optical properties of heterojunction interface are studied based on the optical properties of fluorine-doped tin oxide (FTO) or tin-doped indium oxide (ITO) films, and GaP-epitaxial layer. The efficiency of Au/GaP Schottky photodiodes is analyzed too for comparison. The design of simple, hand-held UV radiometer for quick and accurate measurements using designed novel GaP photodetectors is described also.
Sponsorship	IEEE-Electron Devices Soc.
Starting Page	185
Ending Page	188
File Size	364098
Page Count	4
File Format	PDF
ISBN	0780366662
DOI	10.1109/SMICND.2001.967442
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-09
Publisher Place	Romania
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodiodes Indium tin oxide Optical films Sputtering Ultraviolet sources Instruments Production Heterojunctions Gold Radiometry
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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