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Content Provider | IEEE Xplore Digital Library |
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Author | Xudong Huang Huijie Yu Jih-Sheng Lai Hefner Jr., A.R. Berning, D.W. |
Copyright Year | 2001 |
Description | Author affiliation: Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA (Xudong Huang) |
Abstract | The super junction (SJ) MOSFET exhibits conduction and switching properties similar to those of conventional power MOSFETs. In this paper, we investigate possible benefits and problems associated with connecting SJ MOSFET in parallel for high-power applications. Measured circuit performances of paralleled SJ MOSFET devices are evaluated under hard- and soft-switching conditions. The measurements include (1) turn-on and turn-off switching voltage and current comparison, (2) gate driver resistance effects on current sharing between paralleled SJ MOSFET devices, and (3) SJ MOSFET body diode behavior under hard- and soft-switching conditions. Two test circuits are developed for paralleled SJ MOSFET evaluation. One is an auxiliary resonant snubber chopper for the near zero-voltage switching test, and the other one is an auxiliary resonant snubber inverter for the true zero-voltage condition test. Experimental results indicate that SJ MOSFET can be paralleled without the need for precise device matching if the gate drive resistances are closely matched. |
Starting Page | 2145 |
Ending Page | 2150 |
File Size | 577924 |
Page Count | 6 |
File Format | |
ISBN | 0780370678 |
ISSN | 02759306 |
DOI | 10.1109/PESC.2001.954437 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2001-06-17 |
Publisher Place | Canada |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | MOSFET circuits Circuit testing Power MOSFET Electrical resistance measurement Resonance Snubbers Joining processes Performance evaluation Current measurement Voltage |
Content Type | Text |
Resource Type | Article |
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