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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Musumeci, S. Raciti, A. Sardo, M. Frisina, F. Letor, R. |
| Copyright Year | 1996 |
| Description | Author affiliation: Dept. of Electr., Electron. & Syst. Eng., Catania Univ., Italy (Musumeci, S.) |
| Abstract | IGBT PSpice models recently proposed do not give satisfactory simulation results of the behaviour of punch-through (PT) IGBTs. The reason can be attributed to the incorrect modelling of the particular epitaxial structure of the intrinsic PNP of the IGBT. In particular, the most critical behaviour to simulate accurately is the turn-off since such a transient is strongly influenced by the lifetime of the minority carriers and the reapplied voltage on the collector of the bipolar part of the IGBT. An improved IGBT PSpice model is presented aiming at overcoming the incompleteness of other models. A detailed procedure describing the parameter extraction of the model by new methods is also developed. The proposed model is validated by comparing several simulation runs with experimental traces on both static and dynamic conditions for both fast and slow IGBTs at different working conditions. |
| Starting Page | 1682 |
| Ending Page | 1688 |
| File Size | 584085 |
| Page Count | 7 |
| File Format | |
| ISBN | 0780335007 |
| ISSN | 02759306 |
| DOI | 10.1109/PESC.1996.548807 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-06-23 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | SPICE Parameter extraction Insulated gate bipolar transistors MOSFETs Voltage Circuit simulation Packaging Power semiconductor switches Semiconductor process modeling Employee welfare |
| Content Type | Text |
| Resource Type | Article |
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