NDLI: A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources

Content Provider	IEEE Xplore Digital Library
Author	Reuter, R. van Waasen, St Peters, D. Auer, U. Brockerhoff, W. Tegude, F. J.
Copyright Year	1995
Description	Author affiliation: Solid-State Electronics Department, Sonderforschungsbereich SFB 254, Gerhard-Mercator University Duisburg, Kommandantenstraße 60, 47057 Duisburg, Germany. Tel (+)49 203 379 3393, Fax (+)49 203 379 3400 (Reuter, R; van Waasen, St; Peters, D; Auer, U; Brockerhoff, W; Tegude, F J)
Abstract	Considering the influence of a gate-leakage current on the noise performance of a microwave HFET, a novel approach for modeling the noise behaviour is presented. Based on an extended small-signal equivalent circuit of the HFET and three equivalent intrinsic noise temperatures the noise model allows the exact prediction of all noise parameters in a wide frequency range. The capability of the new model is demonstrated by noise measurements at room temperature and by comparison with a well established temperature noise model. Furthermore, for the first time an investigation of the bias dependence of the equivalent noise sources is carried out, which clearly shows the relationship of the equivalent noise voltage and noise currents to the RF- and DC-behaviour of HFET.
Starting Page	205
Ending Page	210
File Size	6878179
Page Count	6
File Format	PDF
DOI	10.1109/EUMA.1995.336947
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-04
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence HEMTs MODFETs Circuit noise Equivalent circuits Temperature distribution Predictive models Frequency Noise measurement Temperature measurement
Content Type	Text
Resource Type	Article

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