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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Herrera, A. Artal, E. Puechberty, E. Masliah, D. |
| Copyright Year | 1993 |
| Description | Author affiliation: Dpto. de Electronica. Univ de Cantabria. Los Castros s/n. 39005 Santander. Spain. TEL. (34) 42 20. 13. 92-Fax (34) 42 20. 14. 02 (Herrera, A.; Artal, E.) || LEP Philips Microwave Limeil 22, avenue Descartes, 94453 Limeil-Brevannes. France. TEL. (33) 145 67 24-Fax (33)145 10.69.53 (Puechberty, E.; Masliah, D.) |
| Abstract | A high efficiency power amplifier is presented that meets the requirements for low Vdd voltage, and high level of integration for the Digital European Cordless Telephone (DECT) commercial market. It makes use of the high power-added-efficiency of the MESFET device in saturated class-AB, and uses harmonic enhancement for the matching circuits. The design was studied for Robustness and the MMIC is integrating most of the biasing circuits on chip. The only added element is the output matching circuit for the last stage of amplification. The MMIC three stage amplifier achieves over 27dBm of output power, 50% drain efficiency with 0dBm input power and a 3.0 Volts bias supply. |
| Starting Page | 155 |
| Ending Page | 157 |
| File Size | 3508633 |
| Page Count | 3 |
| File Format | |
| DOI | 10.1109/EUMA.1993.336826 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1993-09-06 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | L-band High power amplifiers MMICs Power amplifiers Low voltage Telephony MESFET circuits Power system harmonics Robustness Impedance matching |
| Content Type | Text |
| Resource Type | Article |
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